The South Korean SK hynix has taken a historic step in the semiconductor industry by announcing the completion of development and readiness for mass production of the HBM4, the fourth generation of high-bandwidth memory (High Bandwidth Memory). With this advancement, the company positions itself at the forefront of a market that has become the backbone of artificial intelligence, data centers, and high-performance computing applications.
A milestone for the memory industry
High Bandwidth Memory (HBM) emerged as a response to the increasing speed demands of data processing. Unlike conventional DRAM, HBM stacks multiple memory chips vertically and interconnected, allowing multiplication of data transfer rates compared to traditional modules. Since its introduction in 2015, the technology has evolved through generations: HBM, HBM2, HBM2E, HBM3, HBM3E, and now, HBM4.
The new HBM4 from SK hynix doubles the bandwidth compared to its predecessor thanks to the incorporation of 2,048 input/output (I/O) terminals, twice as many as the previous generation. Additionally, it improves energy efficiency by more than 40%, a critical factor in a context where data centers face rising electricity costs. According to the company’s calculations, integrating it into artificial intelligence systems could boost performance of services by up to 69%, alleviating data bottlenecks and significantly reducing energy costs.
Beyond industry standards
The JEDEC, the international organization responsible for standardizing microelectronics, had set a reference operating speed of 8 Gbps for this type of memory. SK hynix claims to have surpassed this benchmark by implementing speeds over 10 Gbps, making HBM4 the fastest product in its category.
To ensure manufacturing process stability, the company has adopted advanced MR-MUF (Mass Reflow Molded Underfill) technology, which facilitates thermal dissipation and improves reliability in chip stacking. It has also employed its 1bnm process technology, the fifth generation of 10-nanometer lithography, allowing better deformation control and reducing risks during mass production.
Response to the AI boom
The launch of HBM4 isn’t happening in a technological vacuum. The explosion of generative AI models, large-scale training systems, and massive data analysis applications have driven demand for memories capable of powering GPUs and specialized accelerators.
Energy consumption in data centers is now one of the main global challenges: it’s estimated that this sector already accounts for over 3% of worldwide electricity consumption, and AI growth threatens to double that figure in the next decade. In this scenario, every improvement in energy efficiency, like that of HBM4, has a direct impact on sustainability and operating costs.
Statements from company leaders
For Joohwan Cho, HBM development director at SK hynix, this breakthrough “marks a new milestone for the industry. By delivering a product that meets the performance, energy efficiency, and reliability needs of our customers, we ensure not only timely market deployment but also a strong competitive position.”
Meanwhile, Justin Kim, President and Head of AI Infrastructure at SK hynix, emphasized that HBM4 “represents a symbolic turning point beyond current AI infrastructure limitations. This product will be essential for overcoming technological challenges in the coming decade.”
A strategic move
HBM4 memory will be key in the race to lead the AI era. Companies like NVIDIA, AMD, and Intel depend on memory suppliers such as SK hynix, Samsung, and Micron to equip their next-generation GPUs and accelerators. Controlling this technology not only guarantees multi-million-dollar contracts with major hardware manufacturers but also secures a privileged position in a market where Asia and especially South Korea have established dominance.
With this announcement, SK hynix strengthens its role as one of the three global memory giants, alongside Samsung and Micron, emphasizing its strategy to become a comprehensive provider of memory solutions for AI, covering everything from high-performance DRAM to NAND flash storage.
Conclusion
The development of HBM4 positions SK hynix at the forefront of the technological revolution driven by artificial intelligence. Its combination of higher speed, energy efficiency, and manufacturing reliability makes it a product destined to shape the industry in the coming years. As demand for AI infrastructure continues to surge, this innovation could define which players lead the market and which fall behind.
Frequently Asked Questions
What is HBM4 memory, and what is it used for?
Heterogeneous Memory (HBM4) is a high-bandwidth DRAM designed for artificial intelligence, high-performance computing, and data centers. It doubles data processing speeds compared to the previous generation and improves energy efficiency by over 40%.
What improvements does SK hynix HBM4 offer over HBM3E?
HBM4 features 2,048 input/output terminals, twice that of the previous generation, doubling bandwidth. It also achieves speeds exceeding 10 Gbps compared to the 8 Gbps standard and provides significant energy savings, making it the most advanced product on the market.
When will HBM4 be available in the market?
SK hynix has confirmed its mass production system is ready, making it the first in the world to announce large-scale manufacturing of HBM4 in 2025.
What impact will HBM4 have on AI and data centers?
HBM4 will accelerate AI model training and inference, reduce data processing bottlenecks, and lower energy costs for data centers. This will translate into faster, more sustainable, and cost-effective services for businesses and end-users.
via: news.skhynix