The American company accelerates its roadmap with new technologies like RibbonFET 2 and PowerDirect, leaving competitors behind in performance, efficiency, and density.
The Direct Connect 2025 event by Intel has made it clear that the company, led by Lip-Bu Tan, is determined to regain its leadership position in the semiconductor industry. With an ambitious roadmap, cutting-edge technologies, and strategic alliances, Intel Foundry Services (IFS) is positioning itself as a direct threat to TSMC, the current Taiwanese chip manufacturing giant.
The main highlight of the event was the Intel 14A node, a critical evolution that incorporates EUV High-NA lithography for the first time, marking a turning point in the technological race of silicon. According to the revealed data, Intel 14A and its extended version 14A-E promise spectacular improvements that could place Intel ahead of its rivals starting in 2027.
A New Leap in Efficiency and Density: Intel 14A and 14A-E
Based on second-generation RibbonFET transistors (GAA Gen 2) and the new power distribution system PowerVia 2.0, now referred to as PowerDirect, the Intel 14A node has high ambitions:
- Reduction in power consumption of between 25% and 35% at equivalent performance.
- Performance increase of between 15% and 20% at equivalent power consumption.
- Density increase of +30% compared to Intel 18A.
These figures, provided by executive Naga Chandrasekaran, position Intel as a pioneer in the use of EUV High-NA, a technology that TSMC does not plan to use in its A14 or A14P nodes in the short term. This could create a considerable technological gap starting in 2027 when Intel plans to launch final products with this node.
Additionally, Intel will offer three libraries and voltage threshold (Vt) ranges, adapting its nodes to a wide range of applications, from servers to high-end mobile devices.
Intel 18A-P and 18A-PT: More Performance Without Compromising Density
Alongside its next-generation nodes, Intel also presented updates to its 18A node, which is already in risk production. The 18A-P and 18A-PT variants improve efficiency and performance for customers requiring advanced solutions in less time:
- 18A-P provides an 8% performance increase per watt compared to its original version.
- 18A-PT, scheduled for 2028, will incorporate 3D interconnections via Foveros Direct and TSV technology for chip stacking, all with a pitch of 5 micrometers.
Intel assures that its base node, 18A, already offered a 15% increase in performance per watt compared to Intel 3 and a 30% improvement in density, making it an attractive option for top-tier manufacturers like NVIDIA, Broadcom, or AMD.
Ambitious Roadmap to 2028 and Geostrategic Offensive
In total, Intel has confirmed the availability of four advanced nodes with PDKs (Process Development Kits) ready:
- Intel 14A-E: by the end of 2027.
- Intel 18A-P: expected in mid-2026.
- Intel 18A-PT: with TSV and 3D capabilities, in 2028.
- UMC 12: a mature node in collaboration with UMC to compete against the Chinese industry in the low-cost mass production range.
This strategy reflects Intel’s dual ambition: to lead in technological leadership against TSMC and to compete in mature and profitable processes against China, consolidating IFS as a global foundry capable of covering the entire market spectrum.
TSMC Falling Behind in EUV High-NA
While Intel is stepping on the gas, TSMC seems to have underestimated the potential of EUV High-NA lithography, a technology that allows for printing even finer and more precise circuits, essential for maintaining Moore’s Law. The lack of immediate plans by the Taiwanese company to adopt this technology could leave it at a disadvantage in terms of density, performance, and consumption starting in 2027.
Intel, for its part, has assured that within three years it will be able to achieve:
- A 38% increase in performance at the same power consumption.
- An efficiency improvement greater than 50%.
- A 60% jump in transistor density.
Conclusion: Intel has gone from being seen as lagging in advanced nodes to becoming a serious contender for technological leadership. If it meets its roadmap and maintains the pace of innovation, the Intel 14A node with EUV High-NA could mark the beginning of a new era in microelectronics, with direct impact on data centers, artificial intelligence, mobile devices, and more.
The battle for silicon is on, and for the first time in years, Intel has the tools and timing in its favor.
Source: El chapuzas informático