Spain is taking strong steps to position itself as a global leader in the production of silicon carbide chips, a key semiconductor material for high-power electronics. The DioSiC project, supported by the PERTE Microelectronics and Semiconductors, aims to develop the necessary technologies for the large-scale production of polycrystalline silicon carbide wafers.
With a budget of 3.3 million euros, of which the State assumes 68%, the DioSiC project not only represents a significant technological advancement for Spain but is also crucial for Europe’s independence from Asian suppliers, particularly China.
Silicon carbide, composed of silicon and carbon, has unique properties that make it an ideal material for high-power electronics, such as those used in electric vehicles and renewable energies. Its high heat resistance, thermal conductivity, and wide energy band gap make it superior to conventional silicon in these applications.
The DioSiC project involves three leading Spanish companies in their respective fields: Nanoker Advanced Ceramics, Hiperbaric, and Fagor Electrónica. Nanoker, specialized in advanced nanocomposite ceramic products, is responsible for manufacturing polycrystalline silicon carbide substrates using innovative techniques such as SPS (Spark Plasma Sintering).
Meanwhile, Hiperbaric, which controls 65% of the global market for high-pressure machines, applies its HIP (Hot Isostatic Pressing) technology to optimize the mechanical and electrical properties of silicon carbide wafers. Finally, Fagor Electrónica will be in charge of manufacturing integrated circuits using these advanced substrates.
The goal of the DioSiC project goes beyond consolidating Spain and Europe’s independence in the semiconductor supply chain. It also aims to reduce the production cost of integrated circuits by 30% and increase their performance by 35%, which would boost the competitiveness of the European industry.
Mikel Pérez, R&D director at Fagor Electrónica, highlighted the importance of this project as the first step towards the establishment of a silicon carbide manufacturing plant in Spain, an ambitious but achievable goal thanks to the collaboration of these three leading companies.
Expected to conclude in early 2026, the DioSiC project represents a unique opportunity for Spain and Europe to establish themselves as leaders in the production of cutting-edge semiconductors, reducing their external dependence and fostering innovation in a key field for the future of technology.