Here’s the translation of the provided text into American English:
Micron Technology has announced that it is the first company in the industry to ship samples of its new generation of DRAM memory based on the 1γ (1-gamma) node, marking a significant advancement in memory technology for the computational needs of the future.
This milestone in the development of sixth-generation DRAM (10nm class) builds on Micron’s previous leadership with its 1α (1-alpha) and 1β (1-beta) nodes, offering innovations that will drive future computing platforms, from the cloud to industrial and consumer applications, as well as edge AI devices like AI PCs, smartphones, and cars.
The new 1γ DRAM node will initially be implemented in its 16Gb DDR5 memory and will later be integrated across Micron’s entire memory portfolio to meet the increasing demand for high-performance and energy-efficient memory solutions for AI. Designed to deliver speeds of up to 9200MT/s, the 16Gb DDR5 product provides a speed increase of up to 15% and an energy reduction of over 20% compared to its predecessor.
Key Benefits of the New Technology
Micron’s transition to the 1γ DRAM node addresses fundamental challenges facing customers:
Improved Performance: 1γ-based DRAM provides enhanced performance that will support the scaling of computing across various memory offerings, from data centers to edge devices, to meet future AI workload requirements.
Energy Savings: Micron’s 1γ node, which utilizes next-generation high-K metal gate CMOS technology along with design optimizations, enables over 20% lower power consumption, leading to improved thermal profiles.
- Greater Bit Density: Micron’s 1γ node, leveraging EUV lithography, design optimizations, and process innovations, results in over 30% more bits per wafer output compared to the previous generation and the ability to efficiently scale memory supply.
“Micron’s expertise in developing proprietary DRAM technologies, combined with our strategic use of EUV lithography, has resulted in a robust portfolio of cutting-edge 1γ-based memory products ready to drive the AI ecosystem,” stated Scott DeBoer, Executive Vice President and Chief Technology and Product Officer at Micron.
Transforming Products from Cloud to Edge
Serving as the foundation for future products, the 1γ node will be integrated across Micron’s memory portfolio:
Data Centers: 1γ-based DDR5 memory solutions for the data center allow for up to 15% faster performance and provide greater energy efficiency.
Edge AI: Low-power 1γ DRAM solutions offer increased energy savings and higher bandwidth, enhancing the user experience with edge AI solutions.
AI PCs: 1γ DDR5 SODIMMs boost performance and reduce power consumption by 20%, extending battery life and enhancing the overall user experience for laptops.
Mobile: LPDDR5X 1γ will enable exceptional edge AI experiences and continues Micron’s leadership in mobile technology.
- Automotive: 1γ-based LPDDR5X memory expands capacity, longevity, and performance, achieving speeds of up to 9600MT/s.
Micron’s advancements with the 1γ node have been well received by key partners like AMD and Intel, who have already begun validation efforts for Micron’s DDR5 1γ memory, recognizing the substantial improvements in power and density it will bring to their products.
Qualified customers and partners can participate in Micron’s Technology Enablement Program (TEP) for DDR5, which offers early access to technical information and electrical and thermal models, as well as support to aid in the design, development, and introduction of next-generation computing platforms.
Source: micron